FERROELECTRIC THIN FILM, METAL THIN FILM OR OXIDE THIN FILM, AND METHOD AND APPARATUS FOR PREPARATION THEREOF, AND ELECTRIC OR ELECTRONIC DEVICE USING SAID THIN FILM

摘要

Ferroelectric thin film is characterized in that, with the layered crystal structure including oxygen (O) and at least carbon, strontium (Sr), bismuth (Bi), tantalum (Ta) and niobium (Nb), its composition formula is SrBiyTa2O9 ± d or SrxBiy (Ta, Nb) 2O9 ± d, it is assumed that 0.90≤x ＜ 1.00,1.70 y≤3. ＜20 and 0≤d≤1.00, and carbon content is 5%at or less.