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Being the integrated circuit which includes the non-volatile memory device null non-volatile

机译:作为包括非易失性存储器件的集成电路,null non-volatile

摘要

An integrated circuit includes at least one non-volatile memory element having first and second non-volatile transistors connected in series between first and second data lines. A junction between the first and second non-volatile transistors forms an output node. The non-volatile memory element further includes an access transistor connected between a reference voltage line and the junction between the first and second non-volatile transistors. In a programmable logic application, for example a field programmable gate array, the non-volatile memory element controls the state of a switching element, which selectively connects logic elements in the programmable logic application. Based on the voltages applied to the non-volatile memory element, the non-volatile memory element is selectively erased, programmed, operated, monitored and powered-up.
机译:一种集成电路,包括至少一个非易失性存储元件,其具有串联连接在第一和第二数据线之间的第一和第二非易失性晶体管。第一和第二非易失性晶体管之间的结形成输出节点。非易失性存储元件还包括访问晶体管,该访问晶体管连接在参考电压线与第一和第二非易失性晶体管之间的结之间。在例如现场可编程门阵列的可编程逻辑应用中,非易失性存储元件控制开关元件的状态,该开关元件在可编程逻辑应用中选择性地连接逻辑元件。基于施加到非易失性存储元件的电压,非易失性存储元件被选择性地擦除,编程,操作,监视和加电。

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