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Solvents and photoresist compositions for 193 nm imaging
Solvents and photoresist compositions for 193 nm imaging
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机译:用于193 nm成像的溶剂和光刻胶组合物
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摘要
New photoresists are provided that are suitable for short wavelength imaging, including sub-200 nm, particularly 193 nm. Resists of the invention comprise a polymer that is preferably substantially free of aromatic moieties and comprises photoacid-labile repeat units, a photoactive components such as one or more photoacid generator compounds and a solvent component that comprises methyl isoamyl ketone (5-methyl-2-hexanone).
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