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SOLVENT AND PHOTORESIST COMPOSITION FOR 193NM IMAGING

机译:193NM成像的溶剂型和光致抗蚀剂组合物

摘要

PROBLEM TO BE SOLVED: To provide a new photoresist suitable for short-wavelength active radiation exposure imaging at ≤200 nm, in particular, including 193 nm wavelength.;SOLUTION: The photosensitive composition contains a high molecular weight compound as a binder which is a polymer having substantially no aromatic moiety and having a photoacid-labile repeating unit. Moreover, the composition contains one or more photo active components such as a photoacid generating agent compound, methyl isoamyl ketone (5-methyl-2-hexanone) as a solvent, and one or more kinds of solvents such as propylene glycol methylether acetate, cyclohexanone, or the like.;COPYRIGHT: (C)2004,JPO
机译:解决的问题:提供一种新的光致抗蚀剂,该光致抗蚀剂适用于短波主动辐射曝光成像,尤其是包括193 nm波长在内的200 nm短波长;解决方案:光敏组合物包含高分子量化合物作为粘合剂。基本上不具有芳族部分并且具有光酸不稳定的重复单元的聚合物。此外,该组合物包含一种或多种光活性组分,例如光酸产生剂化合物,甲基异戊基酮(5-甲基-2-己酮)作为溶剂,以及一种或多种溶剂,例如丙二醇甲醚乙酸酯,环己酮。等等;版权所有:(C)2004,日本特许厅

著录项

  • 公开/公告号JP2004126509A

    专利类型

  • 公开/公告日2004-04-22

    原文格式PDF

  • 申请/专利权人 SHIPLEY CO LLC;

    申请/专利号JP20030112577

  • 发明设计人 JAMES W THACKERAY;KAVANAGH ROBERT J;

    申请日2003-04-17

  • 分类号G03F7/004;G03F7/039;G03F7/40;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-21 23:29:24

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