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Method of fabricating MOSFETS with improved short channel effects
Method of fabricating MOSFETS with improved short channel effects
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机译:具有改善的短沟道效应的MOSFET的制造方法
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摘要
In the manufacture of CMOS devices, the n+ gate is partially counterdoped with boron to produce a modified p-type FET that has improved short channel effects, reduced gate induced drain leakage and gate oxide fields for improved reliability. A doped polysilicon layer is formed over a silicon or silicon oxide substrate, and is counterdoped with boron to a level of about 1 x 1013/cm2 to 5 x 1016/cm2 to adjust the work function but without changing the essentially n-type character of the gate electrode. This single counterdoping step achieves improved results for sub-micron devices at low cost.;For CMOS device manufacturing, the alternating n-type and p-type devices are made in similar manner but reversing the n-type and p-type dopants.
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机译:在CMOS器件的制造中,n +栅极部分地被硼反掺杂,以生产改进的p型FET,该FET具有改善的短沟道效应,减少的栅极感应的漏极泄漏和栅极氧化物场,以提高可靠性。掺杂的多晶硅层形成在硅或氧化硅衬底上,并被硼反掺杂至大约1 x 10 13 Sup> / cm 2 Sup>至5 x 10 < Sup> 16 Sup> / cm 2 Sup>来调整功函数,但不改变栅电极的本质n型特征。该单个反掺杂步骤以低成本为亚微米器件获得了改进的结果。对于CMOS器件制造,以相似的方式制造交替的n型和p型器件,但反转了n型和p型掺杂剂。
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