2 Manufacturing method for storage node of semiconductor memory device using two step etching process

摘要

PURPOSE: A method for manufacturing a storage node of a semiconductor memory device by using a two-step etching process is provided to be capable of preventing the generation of short phenomenon due to the fall-down of a neighboring storage node and effectively carrying out a process. CONSTITUTION: A silicon oxide layer is formed at the upper portion of a substrate(S41). At this time, a storage node is formed at the inner portion of the silicon oxide layer. A wet etching process is carried out at the silicon oxide layer for exposing the storage node to a predetermined depth(S42). A dry etching process is carried out at the remaining silicon oxide layer for completely exposing the storage node(S43). Preferably, the dry etching process is carried out by using volatile material as a catalyst.