EPITAXIAL SUBSTRATE, MANUFACTURING METHOD OF THE EPITAXIAL SUBSTRATE, METHOD FOR SUPPRESSING WARPAGE OF THE EPITAXIAL SUBSTRATE, AND SEMICONDUCTOR MULTILAYER STRUCTURE USING THE EPITAXIAL SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a technique for suppressing the warpage of an epitaxial substrate.;SOLUTION: The epitaxial substrate 1 is produced by successively epitaxially growing a target group III-nitride layer 13, an interlayer 14 and a group III-nitride layer 15 on a substrate 11 through a buffer layer 12. The interlayer 14, mainly composed of a mixed crystal of GaN and InN expressed by a general formula (Ga_xIn_y) N (0≤x≤1, 0≤y≤1, x+y=1) (or a crystal of GaN), does not contain Al. The interlayer 14 is epitaxially formed at a growth temperature lower than those of the group III-nitride layers 13 and 15, more specifically, at a temperature of 350°C or more and 1,000°C or below.;COPYRIGHT: (C)2005,JPO&NCIPI