Semiconductor(BaSi2)/metal(CoSi2) Schottky-barrier structures epitaxially grown on Si(1 1 1) substrates by molecular beam epitaxy

摘要

We successfully demonstrated epitaxial growth of semiconductor (BaSi2)/metal(CoSi2) Schottky-barrier structures on Si(1 1 1), for thefirst time, by molecular beam epitaxy (MBE). The interface between the CoSi2 and BaSi2 layers was found to be sharp from transmissionelectron microscopy (TEM) observations. The current–voltage characteristics measured at room temperature showed clear rectifyingproperties. When positive bias was applied to the CoSi2 layer with respect to the BaSi2 layer, the current increased exponentially.Electron diffraction patterns obtained using reflection high-energy electron diffraction (RHEED) and TEM are discussed.