Monolithic high frequency integrated circuit structure and method for manufacturing

摘要

PROBLEM TO BE SOLVED: To monolithically integrate passive components, ESD components, and logic components into a high frequency power transistor structure with high cost-efficiency and reliability. ;SOLUTION: A high frequency power FET device 22 is integrated on a semiconductor body 13, together with passive components 23, 24, and 26 electrostatic discharge(ESD) device and/or logic structure, to form a monolithic high frequency integrated circuit structure 10. The high frequency power FET device 22 includes a grounded source configuration. The logic structure uses a high frequency power FET structure of the grounded source structure as one device in a CMOS implementation.;COPYRIGHT: (C)1996,JPO