At least gallium (Ga) in the epitaxial wafer where the epitaxial formation which is made one

摘要

PROBLEM TO BE SOLVED: To improve the light emitting efficiency of a light emitting diode by doping a p-n junction section with nitrogen, and forming an area which is doped with nitrogen at a concentration lower than that in the p-n junction section with a specific thickness or larger on the surface side of an epitaxial layer at a specific distance or longer from the p-n junction. ;SOLUTION: A homogeneous layer composed of the same crystal as that of a single-crystal substrate 10 is formed on the substrate 10, and a graded composition layer 11 and a constant composition layer 12 are successively formed on the homogeneous layer 14. Then a p-n junction 17 is formed adjacently to the constant composition layer 12 in an n-type layer, and a layer 32 which is doped with nitrogen at a low concentration is formed with a thickness of ≥2 μm in a p-type layer 30 at a distance of ≥1 μm from the p-n junction 17. Therefore, an LED having a high light output and improved in light emitting efficiency can be obtained, because the p-type layer 30 can be formed during vapor growth and a layer 32 containing N at a lowered concentration can be formed easily in the layer 30.;COPYRIGHT: (C)2000,JPO