METHOD FOR GROWING GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE CRYSTAL SUBSTRATE, METHOD FOR PRODUCING EPITAXIAL WAFER, AND EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for growing a gallium nitride crystal suppressing cracks generating upon processing for thinning, and allowing to grow a gallium nitride crystal with greater thickness; a gallium nitride crystal substrate, an epitaxial wafer, and a method for producing the epitaxial wafer.;SOLUTION: The method for growing a gallium nitride crystal to grow the gallium nitride crystal on a ground substrate by means of the hydride vapor phase epitaxy (HVPE) using a carrier gas, raw materials of gallium nitride and a gas including silicon as a dopant is characterized in that the carrier gas is purified by permeating the gas through a molecular membrane or an adsorbent during the growth of the gallium nitride crystal, and the dew point of the carrier gas during the growth of the gallium nitride crystal is -60°C or lower.;COPYRIGHT: (C)2010,JPO&INPIT