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Dual damascene partial gap fill polymer fabrication process

机译:双镶嵌部分间隙填充聚合物的制备工艺

摘要

A substrate having a conductive layer is provided. A dielectric layer is then formed above the conductive layer. At least one via hole is then formed in the dielectric layer, to expose a portion of the conductive layer. The conductive layer is then covered with a gap fill polymer layer, to completely fill the via hole. A chemical mechanical polishing step is performed to remove the partial gap fill polymer layer on the outside of the via hole. An etching step, is performed to remove a portion of partial gap fill polymer layer remaining in the via hole, resulting in a partial gap fill polymer. A lithographic process is conducted to form a patterned photoresist layer over the dielectric layer. The photoresist layer has an opening that exposes the via hole and partial gap fill polymer. A portion of the dielectric layer exposed by the opening is etched away, to form a trench in the dielectric layer. The photoresist layer and the partial fill polymer layer are then removed, to expose a part of the conductive layer. The via hole and trench are filled with metal material, to form a plug and line simultaneously.
机译:提供具有导电层的基板。然后在导电层上方形成介电层。然后在介电层中形成至少一个通孔,以暴露出一部分导电层。然后用间隙填充聚合物层覆盖导电层,以完全填充通孔。进行化学机械抛光步骤以去除通孔外部上的部分间隙填充聚合物层。进行蚀刻步骤以去除残留在通孔中的部分间隙填充聚合物层,从而得到部分间隙填充聚合物。进行光刻工艺以在介电层上方形成图案化的光刻胶层。光致抗蚀剂层具有开口,该开口暴露出通孔和部分间隙填充聚合物。蚀刻掉由开口暴露的电介质层的一部分,以在电介质层中形成沟槽。然后去除光致抗蚀剂层和部分填充聚合物层,以暴露一部分导电层。通孔和沟槽填充有金属材料,以同时形成插头和线。

著录项

  • 公开/公告号US2005085069A1

    专利类型

  • 公开/公告日2005-04-21

    原文格式PDF

  • 申请/专利权人 CHINGFU LIN;HSUEH-CHUNG CHEN;

    申请/专利号US20010863647

  • 发明设计人 CHINGFU LIN;HSUEH-CHUNG CHEN;

    申请日2001-05-23

  • 分类号H01L21/4763;

  • 国家 US

  • 入库时间 2022-08-21 22:24:11

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