点击此处 ,将本页翻译成中文
将本页翻译成中文
您现在的位置:首页> 外文会议>Advances in Resist Technology and Processing XXIII pt.2 >文献详情
【6h】

Wet-recess process optimization of a developer-soluble gap-fill material for planarization of trenches in trench-first dual damascene process

【摘要】 This paper describes a new approach to help overcome the challenges of fabricating leading-edge devices by using the trench first dual damascene process. Wet gap-fill materials are designed to reduce film thickness bias across a wafer while keeping wafers in the same track in which they were coated. As the first process step, the wafer is coated with a thick layer of wet gap-fill material to fill all trenches, thus guarding against resist pooling in the trenches. The substrate is then baked to partially cure the wet gap-fill material. Standard 0.26N tetramethylammonium hydroxide (TMAH) is then used to wet etch the wet gap-fill layer back to the substrate surface. For this study, substrates with different trench depths and widths were processed, cross-sectioned, and measured. The effect of trench dimensions and aspect ratio on the develop properties of WGF200-343 was investigated to see if it could be used as a wet trench-fill material. This work will help develop a process that will allow the use of trench-first DD processing in modern semiconductor manufacturing.

【会议名称】 Advances in Resist Technology and Processing XXIII pt.2

【会议地点】San JoseCA(US)

【作者】 Carlton Washburn; Nick Brakensiek; Alice Guerrero; Kevin Edwards; Charlyn Stroud; Nicki Chapman;

【作者单位】 Brewer Science, Inc., 2401 Brewer Drive, Rolla, MO 65401, USA;

【会议组织】

【会议召开年】 2006

【页码】P.61532K.1-61532K.6

【总页数】6

【原文格式】PDF

【正文语种】eng

【中图分类】TN304;

【原文服务方】国家工程技术数字图书馆

【关键词】wet gap fill (WGF);dual damascene (DD);bias;trench-first;low-k;

联系方式:18141920177 (微信同号)

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号