首页> 美国政府科技报告 >Damascene Process for Use in Fabricating Semiconductor Structures Having Micro/Nano Gaps.
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Damascene Process for Use in Fabricating Semiconductor Structures Having Micro/Nano Gaps.

机译:用于制造具有微/纳米间隙的半导体结构的镶嵌工艺。

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摘要

In fabricating a microelectromechanical structure (MEMS), a method of forming a narrow gap in the MEMS includes (1) depositing a layer of sacrificial material on the surface of a supporting substrate, (2) photoresist masking and at least partially etching the sacrificial material to form at least one blade of sacrificial material, (3) depositing a structural layer over the sacrificial layer, and (4) removing the sacrificial layer including the blade of the sacrificial material with a narrow gap remaining in the structural layer where the blade of sacrificial material was removed.

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