Compound semiconductor structure with lattice and polarity matched heteroepitaxial layers

摘要

A compound tetrahedrally coordinated semiconductor structure, whose chemical formula is generally of the form II_nIII_mIV_lV_pVI_q, where n, m, l, p, q represent the relative abundance of each element associated with a particular group of the periodic table. The flexibility of the chemical formula may be used to adjust the lattice constant and polarity to eliminate mismatches from substrates. Other properties, such as those of band gaps, can also be tuned. The design is amenable to layer-by-layer heteroepitaxial growth. In exemplary embodiments, a structure is provided that matches lattice constant and polarity with a Si(100) surface, while having a direct band gap of 1.59 μm.