Misfit accommodation and dislocations in heteroepitaxial semiconductor layers: II-VI compounds on GaAs

摘要

We suggest a model for the nucleation and expansion of dislocations which accommodate the parameter misfit of an epitaxial layer on a substrate, applied, in this work, to a II-VI compound on GaAs. We examine in particular the dislocations threading through the layer, which must be kept as low as possible in density.