机译:在半极性自立式GaN衬底上生长的(AI,ln)GaN异质外延层中异质界面处形成失配位错
Department of Materials, University of California, Santa Barbara, California 93106, USA;
Department of Electrical and Computer Engineering, University of California, Santa Barbara,California 93106, USA;
Department of Materials, University of California, Santa Barbara, California 93106, USA;
Department of Materials, University of California, Santa Barbara, California 93106, USA,Ioffe Physico-Technical Institute, RAS, St. Petersburg 194021, Russia;
Optoelectronics Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku,Ibaraki 300-1295, Japan;
Department of Materials, University of California, Santa Barbara, California 93106, USA,Department of Electrical and Computer Engineering, University of California, Santa Barbara,California 93106, USA;
Department of Materials, University of California, Santa Barbara, California 93106, USA,Department of Electrical and Computer Engineering, University of California, Santa Barbara,California 93106, USA;
Department of Materials, University of California, Santa Barbara, California 93106, USA;
机译:通过在生长在半极性(1122)GaN直立衬底上的(Al,In)GaN外延层中的异质界面处的失配位错产生产生部分应变松弛
机译:通过将Mg离子注入形成在高质量自支撑GaN衬底上的n〜-GaN外延层中形成确定的GaN p-n结
机译:在(0001)或(1122)GaN或AIN衬底上外延生长的(ln,AI,Ga)N纤锌矿薄膜中的位错结构
机译:N〜+ -implanted ALN / Si(111)基材生长的GaN层的脱位减少和结构性能
机译:用于AlGaN / GaN和InAlN / GaN二极管以及在硅(111)衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
机译:在原始GaN(0001)衬底上生长的GaN / AlN超晶格中应变弛豫的特殊性:XRD和AFM的比较研究
机译:用透射电子显微镜分析在alGaN / alN应变层超晶格的4英寸si(111)衬底上生长的GaN层中c + a和-c + a位错之间的反应
机译:在HpVE生长的模板和自支撑GaN衬底上的N型GaN层的mOCVD生长和蚀刻