Methods and devices are provided in which vertically integrated devices are grown in the form of semiconductor (e.g., Ge, GaAs, InGaAs, etc.) one-dimensional nanowires with typical diameter of from about 5 nm to about 50 nm and aspect ration of about 1:10. In one embodiment a nanometer-scale diameter pillar extending from a silicon substrate is employed as a “seed” for fabricating vertical, one dimensional hetero-structures (and/or hetero-devices) containing semiconductor materials with lattice and thermal expansion mismatches to silicon.
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