METHOD FOR FABRICATING VERTICAL-TYPE NANOSTRUCTURE USING METAL ASSISTED CHEMICAL ETCHING METHOD, VERTICAL SILICON NANOSTRUCTURE FABRICATED BY METHOD, AND DEVICE INCLUDING VERTICAL-TYPE SILICON NANOSTRUCTURE

摘要

Provided are a method for fabricating vertical-type silicon nanowires using a metal assisted chemical etching method, a nanostructure fabricated by the method, and a device including the same. The method for fabricating vertical-type silicon nanowires using a metal assisted chemical etching method according to the present invention fabricates nanowires which are densely arranged and long in order to utilize the nanowires efficiently. When silicon nanowires having a large aspect ratio are fabricated, leaning of the nanowires may occur and as a result, adjacent nanowires may agglomerate together. In order to prevent the adjacent nanowires from agglomerating during a metal assisted chemical etching process, the method for fabricating vertical-type silicon nanowires according to the present invention fabricates a mechanically stable structure to prevent the nanowires from leaning.;COPYRIGHT KIPO 2014