FORMING METHOD OF GATE ELECTRODE USING RECESS REGION IN CONDUCTIVE LAYER FOR FORMING GATE ELECTRODE AND DIELECTRIC SPACER AT SIDE WALL OF RECESS REGION

摘要

Purpose: a method of forming of a gate electrode is arranged to reduce notch defect, to obtain there is a gate electrode of a smooth profile to use a recess region in a conductor layer, it is used to form a gate electrode and a dielectric spacer in the side wall of recess region, before the formation for completing gate electrode. Construction: a gate insulating layer (20) is formed in semi-conductive substrate (10). One conductor layer (30) is formed in gate insulating layer. One, which covers capacitor pattern (41), is formed in conductor layer. By using capacitor pattern is covered as a mask, the part of conductor layer is etched, and forms a recess region (31) in conductor layer. One dielectric spacer (51) is formed in the side wall of recess region. By using capacitor pattern and dielectric spacer is covered as a mask, remaining conductor layer is etched, to make gate insulating layer expose and form gate electrode.