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Improved Clival Gate 4H-SiC MESFET with Recessed Drain Drift Region and Recessed P-Buffer Layer

机译：改进了具有凹陷漏极漂移区和凹陷的P缓冲层的栅极栅极4H-SiC MESFET

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Hujun Jia; Peimiao Ma; Yehui Luo; Ding Xing; Hang Zhang; Zhijiao Wang; Qiuyuan Wu;
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年度 2015
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1. Improved double-recessed 4H-SiC MESFETs structure with recessed source/drain drift region [J] . Jinping Zhang, Xiaorong Luo, Zhaoji Li, Microelectronic Engineering . 2007,第12期

机译：具有凹陷的源/漏漂移区的改进的双凹陷4H-SiC MESFET结构
2. Improved multi-recessed 4H-SiC MESFETs with double-recessed p-buffer layer [J] . Jia Hujun, Zhang Hang, Luo Yehui, Materials science in semiconductor processing . 2015,第Null期

机译：具有双凹p缓冲层的改进的多凹4H-SiC MESFET
3. Improved performance of 4H-SiC MESFETs with Γ-gate and recessed p-buffer layer [J] . Hujun Jia, Hang Zhang, Ding Xing, Superlattices and microstructures . 2015,第SEPa期

机译：具有Γ栅极和凹入p缓冲层的4H-SiC MESFET的性能得到改善
4. Improved Clival Gate 4H-SiC MESFET with Recessed Drain Drift Region and Recessed P-Buffer Layer [C] . Hujun Jia, Peimiao Ma, Yehui Luo, International Conference on Electrical, Electronics and Mechatronics . 2015

机译：改进了具有凹陷漏极漂移区和凹陷的P缓冲层的栅极栅极4H-SiC MESFET
5. Wafer-scale Fabrication and Characterization of Recessed-channel PtSe2 MOSFETs with Low Contact Resistance and Improved Gate Control [D] . Li, Lei. 2018

机译：具有低接触电阻和改进的栅极控制的晶片尺度制造和表征凹槽PTSE2 MOSFET
6. A Novel 4H-SiC MESFET with a Heavily Doped Region a Lightly Doped Region and an Insulated Region [O] . Hujun Jia, Mengyu Dong, Xiaowei Wang, 2021

机译：具有重掺杂区域的新型4H-SiC MESFET轻微掺杂的区域和绝缘区域
7. Using Average RF Gate and Drain Currents to Determine Gain Compression Mechanisms for Narrow-recessed and Wide-recessed MESFETs [O] . Meng C.C., Chen J. W., Chang C.H., 2000

机译：使用平均RF栅极和漏极电流确定窄凹和宽凹MESFET的增益压缩机制

Improved Clival Gate 4H-SiC MESFET with Recessed Drain Drift Region and Recessed P-Buffer Layer

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