PURPOSE: A testing device is provided to enable the measurement of an isolation property between active regions of a semiconductor device. CONSTITUTION: A great number of Z-shaped active regions are formed on a semiconductor substrate, each being arranged by turns in reverse shape. In a first row of the active regions, a first active region(35a) and a third active region(35c) each has two bit line contacts(37a,37c) commonly connected to a bit line(39), whereas a second active region(35b) of a second row interposed between the first and third active regions(35a,35c) at a first end has two storage electrode contacts(37b) and a bit line contact. The one storage electrode contact(37b) formed at the first end of the second active region(35b) is disposed between the both bit line contacts(37a,37c) respectively formed at one end of the first and third active regions(35a,35c). Accordingly, the three active regions(35a,35b,35c) constitute a parasitic field transistor for measuring an isolation property of a device. Besides, the bit line contact formed at a second end of the second active region(35b) is connected to another bit line.
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