Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials

摘要

In the work, non-destructive testing the Si and Ge semiconductors by pulse X-ray sources is discussed. Mathematical simulation of the radiation generation in reflection and transmission anode tubes is performed. Details of energy spectrum formation in these pulse tubes are analyzed, and its transformation when passing through thin samples of semiconductor materials is discussed. The dependence of the amount of radiation absorbed by the samples on the amplitude of acceleration voltage is calculated. It is shown how the pulse operation regime and design features of pulse tubes influence the characteristics of the X-ray radiation.