A method for processing of oxide - limited vcsel - semiconductor devices

摘要

It is a method for producing a vcsels on a substrate, and indeed by the formation of a first parallel stack of mirrors on the substrate; forming an active and spacer layer on the first parallel mirror stack and the shaping of a second parallel mirror stack on the active and spacer layer. The second parallel mirror stack is then etched, in order to define a structure, and indeed followed by the oxidation of the circumference side walls of the structure for the formation of a current limiting central zone in the structure, and finally, at least a part of the external side of the structure is etched, in order to remove material which has been oxidized.