Method for processing oxide-confined VCSEL semiconductor devices

摘要

A method of manufacturing a vertical cavity surface emitting laser on a substrate by forming a first parallel stack of mirrors on the substrate; forming an active and spacer layer on the first parallel mirror stack; and forming a second parallel mirror stack on the active and spacer layer. The second parallel mirror stack is then etched to define a structure; followed by oxidizing the peripheral sidewalls of the structure to form a current-confining central region in the structure; and etching at least a portion of the outer sidewalls of the structure to remove oxidized material.