VCSEL device formed using the method for manufacturing a surface-emitting type semiconductor laser device, a manufacturing method of the flat-panel emission type semiconductor laser device, an optical transmission module using the flat-panel emission type semiconductor laser device, an optical transceiver module, optical communication system

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing high-quality practical GaInNAs surface emitting semiconductor laser element, a crystal growing device used for realizing the method, a surface emitting semiconductor laser element formed by using the method and device, and an optical transmitter module, an optical transmitter-receptor module, and an optical communication system using the laser element.;SOLUTION: In the surface emitting semiconductor laser element, a resonator structure includes an active region 23 containing active layers, and reflecting mirrors 21 and 25 provided above and below the active layers on a semiconductor substrate 20. The active layers 23 contain Ga, In, N, and As as main components, and the lower reflecting mirror 21 formed between the substrate 20 and active layers 23 contains a semiconductor distributed Bragg reflecting mirror which has a periodically changing refractive index and reflects incident light through light-wave interference. The active layers 23 are grown by the MBE method and the p-side reflecting mirror (for example, the other reflecting mirror 25) of the reflecting mirrors is grown by the MOCVD method.;COPYRIGHT: (C)2003,JPO