The method of forming the oxide film, a semiconductor device, a method of manufacturing a semiconductor device, oxidation process and SiC-MOS type semiconductor device and a SiC-MOS integrated circuit using the same using the same SiC substrate

摘要

PROBLEM TO BE SOLVED: To form a high-quality chemical oxide film on the surface of a semiconductor, at low voltage and at low temperature.;SOLUTION: While immersing a silicon substrate 1 to be processed in an oxidizing solution 3 in a processing bath 2, the silicon substrate 1 is connected to a power supply 4. While applying a voltage between the silicon substrate 1 and a counter electrode 5 in the processing bath 2, the oxidizing solution 3, such as nitric acid, is made to react with the silicon substrate 1 so that a silicon dioxide film 15 is formed on the surface of the silicon substrate 1. In this process, growth of the silicon dioxide film 15 occurs at the interface between the silicon substrate 1 and the silicon dioxide film 15 (that is, the surface of the silicon substrate 1). Consequently, the thickness of the silicon dioxide film 15 can be controlled arbitrarily while being at a low voltage and a low temperature so that the high-quality silicon dioxide film 15 can be formed easily on the surface of the silicon substrate 1.;COPYRIGHT: (C)2006,JPO&NCIPI