METHOD FOR FORMING OXIDE FILM, SEMICONDUCTOR DEVICE, METHOD AND APPARATUS FOR PRODUCING SEMICONDUCTOR DEVICE, METHOD FOR OXIDIZING SiC SUBSTRATE, SiC-MOS SEMICONDUCTOR DEVICE AND SiC-MOS INTEGRATED CIRCUIT USING SUCH METHOD, AND APPARATUS FOR MANUFACTURING SiC-MOS SEMICONDUCTOR DEVICE AND SiC-MOS INTEGRATED CIRCUIT

摘要

While immersing a silicon substrate (1) to be processed in an oxidizing solution (3) in a process vessel (2), the silicon substrate (1) is connected to a power supply (4). While applying a voltage between the silicon substrate (1) and a counter electrode (5) in the process vessel (2), the oxidizing solution (3) such as nitric acid is reacted with the silicon substrate (1) so that a silicon dioxide film (15) is formed on the surface of the silicon substrate (1). In this process, growth of the silicon dioxide film (15) occurs at the interface between the silicon substrate (1) and the silicon dioxide film (15) (i.e. the surface of the silicon substrate (1)). Consequently, the thickness of the silicon dioxide film (15) can be controlled arbitrarily at low voltage and low temperature, so that a high-quality silicon dioxide film (15) can be easily formed on the surface of the silicon substrate (1). Namely, a high-quality chemical oxide film can be formed on the surface of a semiconductor at low voltage and low temperature.