Method for forming a silicon nitride film, a method of forming a forming method and a p-type semiconductor elements of the gate insulating film

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a silicon nitride film exhibiting excellent reliability, and a method for forming a gate insulation film in which boron atoms can be prevented from being diffused from the gate electrode into a silicon semiconductor substrate, and a method for forming a gate insulation film.;SOLUTION: The method for forming a silicon nitride film comprises a step for forming a silicon film on a basic material using a silicon compound gas containing no hydrogen as a material gas, and a step for supplying a nitrogen gas or a nitrogen compound gas containing no hydrogen above the silicon film and nitriding the silicon film by irradiating it with electromagnetic waves. A silicon nitride film exhibiting excellent reliability where hydrogen is not diffused from the silicon nitride film into other adjacent members can be formed using the silicon nitride film formed by this method.;COPYRIGHT: (C)2003,JPO