METHOD OF FORMING SILICON NITRIDE OXIDE FILM AND MANUFACTURE FOR P-TYPE SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a silicon nitride oxide film which can stably form a thin silicon nitride oxide film having superior characteristics, and moreover can reliably suppress the diffusion of boron atoms from a gate electrode in a p-type semiconductor element. ;SOLUTION: This method for forming a silicon nitride oxide film comprises the steps of dipping a silicon layer 40 in an acid aqueous solution, to form a silicon oxide film 42 on a surface of the silicon layer 40, and nitriding the silicon oxide film 42 to obtain a silicon nitride oxide film 42A. The acid aqueous solution contains at least a type of substance selected from among a group composed of hydrogen peroxide, ozone, sulfuric acid, and nitric acid.;COPYRIGHT: (C)2000,JPO