PHOTORESIST POLYMER HAVING DICYCLOHEXYL PENDANT GROUP AND PHOTORESIST COMPOSITION INCLUDING THE SAME

摘要

A suitable photoresist to the photolithography process for a light source of deep ultraviolet region, in particular by using a short wavelength light source such as 193nm, 157nm the production of highly integrated semiconductor devices polymers and photoresist compositions containing the same are disclosed. The photo-resist polymer is to be with the repeating unit represented by formula (1a) comprising at least one repeating unit selected from the group consisting of the formula 1b and 1c.; [Chemical Formula 1a]; Formula 1b]; Formula 1c]; In Formula 1a to _{1c, X 1, X 2,} X 3 and X ₄ are each independently selected from CH _2, CHOH, is O or S, R ₁ is H, CH ₃ or CF _3, R ₃ and R ₅ is are each a CH ₃ or c ₂ H ₅ independently, R ^* is H or CH _3, m is an integer from 0 to 2, n and o are each independently 0 or 1, a, c and e are in the polymer a, c and e molar ratio of the repeating unit of the polymer as a whole number of the repeating units contained are a: c: e = 1 ~ 20mol%: 0 ~ 60 mol%: is 0 ~ 30 mol%.