A THERMALLY CROSSLINKABLE POLYMER FOR A BOTTOM ANTI-REFLECTIVE COATING FOR PHOTOLITHOGRAPHY, A COMPOSITION FOR PREPARING A BOTTOM ANTI-REFLECTIVE COATING USING THE SAME, AND PREPARATION METHOD THEREOF

摘要

The present invention is a standing wave generated in the photoresist a fine image by preventing reflections occurring in the substrate layer beneath the photoresist layer during exposure of the highly integrated semiconductor optical micro-circuit processing techniques (photolithography) of using a short wavelength ultraviolet rays of less than 250 nm (standing wave) can be removed to effect cross-linking function having a film bottom reflection represented by the general formula (1) below (bottom antireflective coating layer) material an organic polymer, wherein this production of the bottom anti-reflective coating composition for preparing and those using for relate to.; Formula 1