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Void Elimination Research in Bottom Anti-Reflective Coatings for Dual Damascene Photolithography

机译:双镶嵌光刻的底部抗反射涂层中空隙消除的研究

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This paper describes the research completed to qualify materials to be used as bottom anti-reflective coatings (BARCs) for dual damascene (DD) photolithography. Several problems have been identified in the DD process. Among them are low fill, iso-dense bias, meniscus shape, via wall coating, and void formation. The issue focused upon in this research is incomplete displacement or void formation in the vias. These voids will have detrimental effects and could ultimately cause chip failure.
机译:本文介绍了已完成的研究,该研究旨在验证可用于双大马士革(DD)光刻的底部抗反射涂层(BARC)的材料。在DD过程中发现了几个问题。其中包括低填充,等密度偏压,弯月面形状(通过壁涂层)和空隙形成。本研究关注的问题是通孔中的位移不完全或空隙形成。这些空隙将产生有害影响,并最终导致芯片故障。

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