首页> 外国专利> PRE-RINSING COMPOSITION FOR IMMERSION LITHOGRAPHY AND LITHOGRAPHY METHOD USING THE SAME

PRE-RINSING COMPOSITION FOR IMMERSION LITHOGRAPHY AND LITHOGRAPHY METHOD USING THE SAME

机译:浸入式光刻术的预冲洗组合物和使用该方法的光刻方法

摘要

The present invention relates to a charter for immersion lithography defined compositions and methods using the same lithography, immersion lithography Prior to performing the process, by the water as a main component and a nonionic surfactant as an additive to clean the wafer by using the tablet charter composition comprising a compound of formula 1, the immersion lithography process carried out at the time of the immersion liquid composition for lithography be used as the pure water is a problem in that the supporting part or the concentrated liquid composition is filled completely and the fine resolution on the topology, the micro bubbles existing between the liquid composition and the photoresist pattern is removed. ; [ Formula 1] ; wherein, ; R is the main chain or side chain-substituted alkyl having 1 to 40, ; n is an integer selected from 10 to 10000.
机译:用于浸没式光刻的组合物和方法本发明涉及使用浸没式光刻法定义的组合物和方法,使用相同的光刻法,浸入式光刻法在进行该工艺之前,通过使用水作为主要成分,使用水作为主要成分和非离子表面活性剂作为添加剂来清洁晶片包含式1的化合物的组合物,将用于光刻的浸没液体组合物用作纯水时所进行的浸没光刻工艺是这样的问题,即支撑部分或浓缩的液体组合物被完全填充并且精细分辨率在拓扑上,去除了液体组合物和光致抗蚀剂图案之间存在的微气泡。 ; [ 公式1] ;其中, R为具有1至40的主链或侧链取代的烷基; n是从10到10000之间选择的整数。

著录项

  • 公开/公告号KR20060064894A

    专利类型

  • 公开/公告日2006-06-14

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20040103575

  • 发明设计人 JUNG JAE CHANG;LEE SUNG KOO;

    申请日2004-12-09

  • 分类号G03F7/32;

  • 国家 KR

  • 入库时间 2022-08-21 21:25:33

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