Plasma Etching Apparatus for Simultaneous Etching of Edge, Bevel and Back-side of Silicon Wafer

摘要

The present invention relates to a semiconductor etching apparatus, in particular the edge of the silicon wafer, the side surface, the lower surface at the same time A plasma etching apparatus for etching. ; The plasma etching apparatus of the present invention includes a reaction chamber and a vacuum exhaust to create an external and an isolated vacuum atmosphere, and is in the reaction chamber Slot for access of the wafer transfer mechanism for mounting or removal of the wafer, with a minimum contact area between the wafer and the back bottom to support the wafer without slipping movement mechanism, the accurate position of the wafer alignment pins for holding the wafer and the reaction gas inlet, located on top of the etch chamber, within the reaction chamber or is located outside of the plasma that may be converted to an etching gas into a plasma state by the source, the wafer to prevent the plasma to penetrate into the upper surface of the wafer and discloses a plasma etching apparatus is characterized in that a predetermined gap with a ground shield to maintain.