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Back-side Thinning of Silicon Carbide Wafer by Plasma Etching using Atmospheric-pressure Plasma

机译：利用常压等离子体等离子体蚀刻背面减薄碳化硅晶片

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Yasuhisa Sano; Kohei Aida; Hiroaki Nishikawa; Kazuya Yamamura; Satoshi Matsuyama; Kazuto Yamauchi;
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年度 2016
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1. Dicing of SiC wafer by atmospheric-pressure plasma etching process with slit mask for plasma confinement [J] . Yasuhisa Sano, Hiroaki Nishikawa, Yu Okada, Materials science forum . 2014,第pta2期

机译：用大气压等离子体刻蚀工艺用狭缝掩模对SiC晶片进行切块
2. Thinning of a two-inch silicon carbide wafer by plasma chemical vaporization machining using a slit electrode [J] . Yu Okada, Hiroaki Nishikawa, Yasuhisa Sano, Materials science forum . 2014,第pta2期

机译：使用狭缝电极通过等离子化学汽化加工来减薄两英寸的碳化硅晶片
3. Atmospheric-Pressure Plasmas for Wide-Area Thin-Film Deposition and Etching [J] . Volkmar Hopfe, David W. Sheel Plasma processes and polymers . 2007,第3期

机译：用于大面积薄膜沉积和蚀刻的常压等离子体
4. Back-Side Thinning of Silicon Carbide Wafer by Plasma Etching Using Atmospheric-Pressure Plasma [C] . Yasuhisa Sano, Kohei Aida, Hiroaki Nishikawa, International Conference of Asian Society for Precision Engineering and Nanotechnology . 2012

机译：通过使用大气压等离子体通过等离子体蚀刻碳化硅晶片的背面变薄
5. Anisotropic fluorocarbon plasma etching of silicon/silicon germanide heterostructures and plasma etching-induced sidewall damage [D] . Ding, Ruhang 2008

机译：硅/硅锗化物异质结构的各向异性碳氟化合物等离子体刻蚀和等离子体刻蚀引起的侧壁损伤
6. Silicon Wafer Etching Rate Characteristics with Burst Width Using 150 kHz Band High-Power Burst Inductively Coupled Plasma [O] . Hisaki Kikuchi, Katsuyuki Takahashi, Seiji Mukaigawa, 2021

机译：硅晶片蚀刻速率特性具有突发宽度使用150 kHz带高功率突发电感耦合等离子体
7. Ultra-small photoluminescent silicon-carbide nanocrystals by atmospheric-pressure plasmas [O] . Askari Ghotbabadi, Sadegh, Ul Haq, Atta, Macias-Montero, Manuel, 2016

机译：常压等离子体制备的超小型光致发光碳化硅纳米晶体

Back-side Thinning of Silicon Carbide Wafer by Plasma Etching using Atmospheric-pressure Plasma

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