Lateral MISFET has semiconductor body of doped semiconductor substrate of first conductivity type and on semiconductor substrate epitaxial layer is provided to first conductivity type complementing second conductivity type

摘要

Lateral MISFET has semiconductor body (3) of a doped semiconductor substrate (4) of first conductivity type. On the semiconductor substrate an epitaxial layer (5) is provided to first conductivity type complementing second conductivity type. Lateral MISFET has a drain electrode (6), source electrode (7), gate electrode (8) with a gate isolator (9). A semiconductor region (10) of the first conductivity type is provided adjacent to gate isolator and embedded in the epitaxial layer. A drift zone (11) of the second conductivity type is arranged in the epitaxial layer between the source electrode and the drain electrode. In the arranged rows and columns, a cloumn-shaped region (14) is arranged. The boundary layers (15) exhibit a material layer (16) in drift zone, which in each case exhibits a schottky contact (17) at the material of the drift zone. An independent claim is also included for the method for producing lateral MISFET.