Metal oxide semiconductor transistor comprises a sink doped with a first conductivity type in semiconductor substrate, an epitaxial layer and source/drain regions of a second conductivity type and channel region arranged in epitaxial layer

摘要

Metal oxide semiconductor transistor comprises: sink doped with a first conductivity type in semiconductor substrate; epitaxial layer arranged in sink surface and having doping concentration of less than 1017 cm-3; and source/drain regions of second conductivity type and a channel region arranged in epitaxial layer. Depth of source/drain regions is less than or equal to epitaxial layer thickness. An Independent claim is also included for a process for the production of the metal oxide semiconductor (MOS) transistor comprising: producing a sink doped with a first conductivity type in the semiconductor substrate; growing an epitaxial layer on the surface of the sink; producing a gate dielectric on the surface of the epitaxial layer; forming a gate electrode on the surface of the gate dielectric; and producing source/drain regions doped with second conductivity type in the epitaxial layer.