Method of forming an asymmetric recess structure, semiconductor device having a asymmetric recessed gate structure and method of manufacturing the semiconductor device

摘要

An asymmetric recess gate structure is provided to greatly increase the length of a channel formed along the lower part of an asymmetric recess gate structure by extending the lower part of the asymmetric recess gate structure as a shape of circular type, oval type or track type. An asymmetric recess gate structure has a first recess(530a) formed in a direction vertical to a substrate(500) and a second recess(555a) formed under the first recess in a horizontal direction with respect to the substrate. A gate insulation layer(570) is formed on the sidewall and the bottom surface of the asymmetric recess structure. A gate electrode(580) is formed on the gate insulation layer, composed of a lower part burying the asymmetric recess structure and an upper part protruding to the upper surface of the substrate.