MANUFACTURING METHOD OF GROUP III NITRIDE SEMICONDUCTOR, MANUFACTURING METHOD OF GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND LAMP

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a group III nitride semiconductor by which conductivity can be controlled on the basis of the quantity of an added donor impurity and a group III nitride semiconductor can be efficiently formed by a sputtering method.;SOLUTION: The manufacturing method of the group III nitride semiconductor is provided with a sputtering step of forming a single crystalline group III nitride semiconductor layer doped with a donor impurity by a sputtering method in an atmosphere containing 20-80% a nitride atom-containing gas and an inert gas.;COPYRIGHT: (C)2008,JPO&INPIT