首页> 外国专利> SEMICONDUCTOR CHARGE PUMP USING MOS (METAL OXIDE SEMICONDUCTOR) TRANSISTOR FOR CURRENT RECTIFIER DEVICE

SEMICONDUCTOR CHARGE PUMP USING MOS (METAL OXIDE SEMICONDUCTOR) TRANSISTOR FOR CURRENT RECTIFIER DEVICE

机译:使用MOS(金属氧化物半导体)晶体管的半导体电荷泵,用于电流整流器设备

摘要

A semiconductor charge pump includes a plurality of P-channel MOS transistors being connected in series, a plurality of first pumping capacitors one electrode of each of which is connected to a connection point of each of the P-channel MOS transistors, a clock signal generating circuit which generates first and second clock signals whose phases are different from each other by 180 degrees, the first and second clock signals being alternately supplied to the other electrodes of the first pumping capacitors. The semiconductor charge pump further includes a plurality of dynamic level converter circuits each including a resistor element and a second pumping capacitor and connected to each of gates of the P-channel MOS transistors.
机译:半导体电荷泵包括串联连接的多个P沟道MOS晶体管,多个第一泵浦电容器,每个第一电容器的一个电极连接到每个P沟道MOS晶体管的连接点,时钟信号产生该电路产生相位彼此相差180度的第一和第二时钟信号,该第一和第二时钟信号被交替地提供给第一泵浦电容器的另一个电极。半导体电荷泵还包括多个动态电平转换器电路,每个动态电平转换器电路包括电阻器元件和第二泵浦电容器,并连接到P沟道MOS晶体管的每个栅极。

著录项

  • 公开/公告号US2008246535A1

    专利类型

  • 公开/公告日2008-10-09

    原文格式PDF

  • 申请/专利权人 TOSHIMASA NAMEKAWA;HIROSHI ITO;

    申请/专利号US20080138005

  • 发明设计人 HIROSHI ITO;TOSHIMASA NAMEKAWA;

    申请日2008-06-12

  • 分类号G05F1/10;

  • 国家 US

  • 入库时间 2022-08-21 20:12:34

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