首页> 外国专利> Intermediate Band PhotoSensitive device with Quantum Dots that are inserted in Tunnel Barrier formation of Organic Matrix

Intermediate Band PhotoSensitive device with Quantum Dots that are inserted in Tunnel Barrier formation of Organic Matrix

机译:带有量子点的中间带光敏器件插入有机基质的隧道势垒形成中

摘要

A Plurality of Quantum Dots each a structure. Quantum Dots are embedded in an organic Matrix. At least the quantum dots and the Organic Matrix are photoconductive Semiconductors.The structure of each Quantum Dot is prepared as a Tunneling barrier to require a charge Carrier (Electron or Hole) at a base of the Tunneling Barrier in the Organic Matrix of a quantum mechanical Tunnel to reach the respective Quantum Dot.A First Quantum State in each Quantum Dot is between a lowest unoccupied molecular orbital (lumo) and the highest occupied molecular orbital (Homo) of the Organic Matrix. The Wave functions of the First Quantum State of the Plurality of Quantum Dots may overlap to form an intermediate Band.
机译:多个量子点每个结构。量子点被嵌入有机矩阵中。至少量子点和有机基体是光电导半导体。每个量子点的结构都准备作为隧穿势垒,要求在量子力学有机矩阵的隧穿势垒的底部需要电荷载流子(电子或空穴)到达相应量子点的隧道。每个量子点中的第一量子态介于有机基质的最低未占据分子轨道(lumo)和最高占据分子轨道(均质)之间。多个量子点的第一量子态的波函数可以重叠以形成中间带。

著录项

  • 公开/公告号AR057250A1

    专利类型

  • 公开/公告日2007-11-21

    原文格式PDF

  • 申请/专利权人 THE TRUSTEES OF PRINCETON UNIVERSITY;

    申请/专利号AR2006P105552

  • 发明设计人 FORREST STEPHEN R.;

    申请日2006-12-15

  • 分类号H01L51/20;

  • 国家 AR

  • 入库时间 2022-08-21 20:08:57

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