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METHOD OF MANUFACTURING GERMANIUM SILICIDE AND DEVICE HAVING GERMANIUM SILICIDE FORMED BY THE SAME
METHOD OF MANUFACTURING GERMANIUM SILICIDE AND DEVICE HAVING GERMANIUM SILICIDE FORMED BY THE SAME
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机译:硅化锗的制造方法以及具有相同特征的硅化锗的装置
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摘要
A kind of method is arranged to reduce sheet resistance for manufacturing a germanium silicide and forming a germanium silicide by the heat treatment of high pressure for a period of time at low temperature by the identical device with germanium silicide of application. A kind of method includes the following steps: for manufacturing a germanium silicide: preparation one substrate (11), wherein a metal layer is formed in a region of SiGe; A germanium silicide is manufactured by heating substrates, there is the metal layer in a high pressure. Heat treatment is operated the anticyclonic method for annealing 3 to 100, is passed through a single layer or plural layer overlapping in 200 to 600 degrees Celsius of at a temperature of metal layer, is made of a single atom or a kind of alloy.
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