首页> 外国专利> METHOD OF MANUFACTURING GERMANIUM SILICIDE AND DEVICE HAVING GERMANIUM SILICIDE FORMED BY THE SAME

METHOD OF MANUFACTURING GERMANIUM SILICIDE AND DEVICE HAVING GERMANIUM SILICIDE FORMED BY THE SAME

机译:硅化锗的制造方法以及具有相同特征的硅化锗的装置

摘要

A kind of method is arranged to reduce sheet resistance for manufacturing a germanium silicide and forming a germanium silicide by the heat treatment of high pressure for a period of time at low temperature by the identical device with germanium silicide of application. A kind of method includes the following steps: for manufacturing a germanium silicide: preparation one substrate (11), wherein a metal layer is formed in a region of SiGe; A germanium silicide is manufactured by heating substrates, there is the metal layer in a high pressure. Heat treatment is operated the anticyclonic method for annealing 3 to 100, is passed through a single layer or plural layer overlapping in 200 to 600 degrees Celsius of at a temperature of metal layer, is made of a single atom or a kind of alloy.
机译:安排了一种方法来减小薄层电阻,该薄层电阻用于制造硅化锗,并且通过与应用的硅化锗相同的装置在低温下通过高压热处理一段时间来形成硅化锗。一种方法包括以下步骤:制造硅化锗:准备一个衬底(11),其中在SiGe的区域中形成金属层;通过加热基板来制造硅化锗,其中金属层处于高压状态。进行热处理的反气旋方法用于3到100的退火,在200到600摄氏度的温度下通过单层或多层重叠的金属层,由单原子或一种合金制成。

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