Study on the impact of Ge-implantation on the work function of fully silicided NiSi gate as ultra-shallow junction formed by using germanium preamorphization

摘要

In this paper the impact of Ge-implantation on the work function of fully silicided NiSi gate is investigated. C-V measurement shows that work functions of NiSi gates with and without Ge implantation vary slightly, from 4.759 eV to 4.729 eV. The increase of interface state and fixed oxide charge introduced by Ge preamorphization implantation is not observed. These results demonstrate that fully silicided NiSi gate technology can be integrated with Ge preamorphization implantation in self alignment CMOS process.