Photoluminescence from neodymium silicide thin films formed by MEVVA ion source

摘要

Neodymium silicides were synthesized by Nd ion implanted into Si substrates with the aid of a metal vaporvacuum arc (MEVVA) ion source. The blender of Nd5Si4 and NdSi2was formed in a neodymium-implanted silicon thinfilm during the as-implanted state, but there was only single neodymium silicide compound in the post-annealed state,and the phase changed from NdSi2 to Nd5Si4 with increasing annealing temperature. The blue-violetluminescence excited by ultra-violet was observed at the room temperature (RT), and the intensity of photoluminescence(PL) increased with increasing the neodymium ion fluence. Moreover,the photoluminescence was closely dependent onthe temperature of rapid thermal annealing (RTA). A mechanism ofphotoluminescence was discussed.