The photoresist strip process and wafer plasma etching by de-fluorination step and de-fluorination of intervening chamber

摘要

Plasma etching method is that using a polymerization etch process gas to carry out plasma etching process the photoresist mask on the workpiece, the polymerization etching process gas, protective polymer on the surface of the photoresist mask during the etching process is intended to produce a plasma polymerization species deposited as a layer, the photoresist mask is removed before and after the etching step, bind to the chamber (a) RF plasma source power, on the one hand, substantially in the chamber RF plasma bias power By not bind to, and removed from the chamber surfaces, including the ceiling of the chamber, residue until removed from the chamber surfaces, is introduced into the chamber containing hydrogen gas, and (b), the residue of the type comprising a polymeric material by binding to the chamber RF plasma bias power, while it does not bind substantially to the chamber RF plasma source power is removed from the surface of the photoresist mask, a protective polymer layer, polymer layer, a photoresist mask including the step of until removed from the surface, is introduced into the chamber a process gas containing carbon monoxide and oxygen.