A method of manufacturing a semiconductor device with a transistor bulk and SOI transistors

摘要

By forming the transistor bulk form (151B) of the CMOS circuit of the SOI-based, the RAM area sensitive, RAM areas are formed based on the bulk transistor structure, or by increasing the width of the transistor From the hysteresis effect can be typically considered by the body connection is reduced, it is possible to save very effective chip area. Thus, the benefits of fast switching speed and, at the same time is kept to the speed-critical circuits such as the CPU core, RAM circuit may be formed in an efficient manner very space.