Si-On-ONO (SOONO) Devices Realized on Bulk Si Wafers for Fully-Depleted SOI Transistor and 4-Bit Flash Memory Applications

摘要

We proposed and successfully demonstrated Si-on-ONO (SOONO) devices for fully depleted SOI transistor and 4 bit flash memory applications. In terms of HP transistor, SOONO MOSFETs showed good SCE immunity and high driving currents. In terms of a 4-bit flash memory, SOONO MOSFETs with ONO layers as their gate dielectrics showed clear 4-bit operation using the physically separated 4 storage nodes of double ONO layers.