SPUTTERING APPARATUS FOR DEPOSITING A HIGHER PERMITTIVITY DIELECTRIC FILM

摘要

A method of depositing a high permittivity dielectric film on a doped silicon or silicon compound layer of a wafer. The method includes a first step of nitriding a specific element (A) such as hafnium Hf to form a nitride film (A_xN_y) on the silicon layer, wherein the specific element (A) and nitrogen (N) in the nitride film (A_xN_y) have a predetermined fraction relationship between x and y; a second step of oxidizing the nitride film in a oxygen atmosphere to form the dielectric film (AON).