REFRACTORY METAL-DOPED SPUTTERING TARGETS, THIN FILMS PREPARED THEREWITH AND ELECTRONIC DEVICE ELEMENTS CONTAINING SUCH FILMS

摘要

Metallic materials consisting essentially of a conductive metal matrix, preferably copper, and a refractory dopant component selected from the group consisting of tantalum, chromium, rhodium, ruthenium, iridium, osmium, platinum, rhenium, niobium, hafnium and mixtures thereof, preferably in an amount of about 0.1 to 6% by weight based on the metallic material, alloys of such materials, sputtering targets containing the same, methods of making such targets, their use in forming thin films and electronic components containing such thin films.